Ferroelectric Transistor and Material Research
Chinese scientists unveiled the world's smallest and most energy-efficient ferroelectric transistor (FeFET) on February 26, 2026, designed to anchor the next generation of high-performance AI hardware. As of February 26, 2026: This FeFET integrates memory and processing into a single unit, mimicking human neurons to reduce data transfer bottlenecks in conventional chips. Researchers Qiu Chenguang of Peking University and Peng Lianmao of the Chinese Academy of Sciences developed this FeFET, which features a 1-nanometer gate and operates at a low voltage of 0.6 volts. Additionally, Amherst College researchers developed a new class of molecular ferroelectrics utilizing nitrogen inversion for polarization switching, published on February 24, 2026, in the Journal of the American Chemical Society, demonstrating azangulene exhibits above-room-temperature ferroelectricity.
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18 updates
2026
18 updatesChinese scientists have unveiled the world's smallest and most energy-efficient ferroelectric transistor (FeFET), designed to anchor the next generation of high-performance AI hardware. These transistors integrate memory and processing into a single unit, mimicking human neurons to reduce data transfer bottlenecks in conventional chips.
Chinese researchers, including Qiu Chenguang of Peking University and Peng Lianmao of the Chinese Academy of Sciences, have developed the world's smallest and most energy-efficient ferroelectric transistor (FeFET) for AI hardware. Published in Science Advances, this FeFET integrates memory and processing, mimicking neural function to reduce data transfer bottlenecks. Another team from the Institute of Physics at the Chinese Academy of Sciences identified one-dimensional charged domain walls in ferroelectric materials, offering a basis for ultra-high-density devices, as published in Science.
via China Daily
Researchers at Amherst College have developed a new class of molecular ferroelectrics utilizing nitrogen inversion for polarization switching, suitable for next-generation digital information storage. Published on February 24, 2026, in the Journal of the American Chemical Society, the study demonstrates that azangulene exhibits above-room-temperature ferroelectricity.
Researchers have developed the world's smallest ferroelectric transistor with a 1-nanometer gate, operating at a low voltage of 0.6 volts. Additionally, a new fatigue-free ferroelectric material has been created, addressing polarization fatigue issues in conventional ferroelectrics. These advancements promise increased information storage density and improved performance in semiconductor devices.
via Global Times
Chinese scientists have developed a high-performance computing-in-memory device using a novel engineered material, as published in the journal Science. This breakthrough addresses challenges in applying ferroelectric materials to advanced chips, enabling wafer-scale, ultrathin, and uniform ferroelectric layers.
via english.news.cn
Researchers enhanced the negative electrocaloric effect in Sn-doped PbHfO3 films. Additionally, Pb(Zr0.52Ti0.48)O3 ceramic was developed as a novel self‐powered X‐ray detection material and Chinese researchers developed a perovskite solar cell with a copper electrode that hits 20.1% efficiency.
via rsc.org·researchgate.net·pv-magazine-usa.com·english.ciomp.cas.cn·sme.hit.edu.cn
Yun-Ying Wang, Peng-Wen Chen, Yu-Hsin Chen and Mei-Yu Yeh researched advanced photoresponsive azobenzene hydrogels with push–pull electronic effects, resulting in a breakthrough in photoswitchable adhesive technologies.
via pubs.rsc.org
Chinese researchers have made multiple new breakthroughs in ferroelectric materials, including a novel material from Peking University with enhanced room-temperature performance for data storage, a new class of materials from CAS and Tsinghua University with superior switching speeds for low-power computing, and a high-performance material for AI hardware with improved endurance and scalability.
Libevitug has been approved in China as the first-in-class treatment for hepatitis D. This marks a significant advancement in medical treatment within the country.
via en.people.cn
Chinese researchers have made significant breakthroughs in ferroelectric materials and transistors. This includes the development of the world's smallest ferroelectric transistor with a 1-nanometer gate, operating at 0.6 volts, and a novel fatigue-free ferroelectric material. Additionally, a phenomenon called 'proximity ferroelectricity' has been discovered, where non-ferroelectric materials gain ferroelectric properties when stacked with a ferroelectric material, potentially leading to more efficient data storage and electronics.
Chinese researchers have achieved a significant breakthrough in ferroelectric materials, which is expected to dramatically increase information storage density. The team from the Institute of Physics at the Chinese Academy of Sciences identified one-dimensional charged domain walls within a fluorite-structured material.
via news.cgtn.com·english.news.cn·english.news.cn·english.news.cn·english.imr.cas.cn
A UK-China symposium was held in Jinan, China, bringing together researchers from the University of Bath, Shandong University, and Qilu University. The event focused on advancements in neuromorphic materials and devices, aiming to strengthen collaborations.
via bath.ac.uk
The aircraft carrier Shandong reportedly entered a dry dock at the Yulin naval base for repair and maintenance, indicating ongoing operational cycles and the development of robust logistical support infrastructure.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
Chinese researchers developed a novel water-soluble, self-assembling organic ferroelectric material using peptide molecules, which exhibits ultralow driving voltage and promotes neuronal axon growth.
FMC, a company developing persistent memory cells based on ferroelectric thin-film hafnium oxide, secured funding to accelerate commercialization. These cells aim to replace volatile DRAM and SRAM cache memory, targeting AI data centers, high-performance databases, and edge AI devices, demonstrating the ongoing commercial push for ferroelectric memory solutions.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
Researchers at the Institute of Metal Research (IMR) have developed a novel ferroelectric ultraviolet photodetector material that significantly enhances speed by nearly ten thousand-fold, overcoming long-standing performance bottlenecks.
New research has led to the first synthesis of ferroelectric crystals with naphthenic hydrocarbon-modified carborane vertices, exhibiting high Curie temperatures. Additionally, a new paradigm called Fractional Quantum Ferroelectricity (FQFE) is emerging, challenging traditional theory by suggesting ferroelectric polarization can exist in crystals outside conventional polar point groups.
Researchers led by Professor Hu Benlin at the Ningbo Institute of Materials Technology and Engineering made findings on reducing dielectric loss in high dielectric constant elastomers. Additionally, Shandong University researchers proposed a novel mechanism for coupling valley index with ferroelectricity in 2D multiferroic lattices.
2025
10 updates
2025
10 updatesChinese researchers at the Shanghai Institute of Ceramics have discovered a ductile ferromagnetic semiconductor and novel design strategies for electrolyte and electrode materials. Additionally, Professor Lijun Yang's team achieved a breakthrough in controllable super-resolution micro–nanopatterning of two-dimensional ferroelectric materials, and Prof. Zong Wenjun's team developed a novel metallographic characterization technique.
The Liaoning carrier group transited through the Miyako Strait and conducted drills along the Ryukyu Islands, underscoring its continued operational presence and regional activities.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
A Chinese research team led by Tong Zhou made a breakthrough in spintronics, proposing to use molecular ferroelectrics and altermagnetism to control electron spins with electric signals.
via eurekalert.org
The Fujian was officially commissioned into the PLAN at Sanya Naval Base, establishing China as one of the few nations to operate three aircraft carriers.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
Prof. Sherry Chen Xian and Dr. Zhang Chenbo developed FerroAI, a deep learning model capable of generating phase diagrams for ferroelectric materials. Additionally, scientists from Hanoi University of Science and Technology published a breakthrough in ferroelectric materials research in Nano Letters.
A review co-authored by researchers from Xi'an Jiaotong University in China highlighted recent progress in improving the piezoelectric properties of ferroelectric materials. This research is crucial for developing high-performance piezoelectric devices and systems, with future implications for integrated circuit-enabled electronic devices.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
A Korean research team led by Prof. Si-Young Choi from POSTECH discovered ferroelectric phenomena at a subatomic scale in the natural mineral Brownmillerite.
via sciencedaily.com
Chinese researchers have made breakthroughs in upconversion luminescent materials, layer-spintronics, 3D Fe-NAND memory, and perovskite solar cells.
via english.ciomp.cas.cn·physicsworld.com·news.skhynix.com·pv-magazine.com
Researchers at the Institute of Metal Research, Chinese Academy of Sciences, discovered polar Bloch points in strained ferroelectric films on May 13, 2025. Additionally, on March 19, 2025, Prof. HU Weijin's team proposed a novel strategy for enhancement.
IIT-Roorkee researchers have developed a lead-free anti-ferroelectric perovskite dielectric ceramic material for energy storage in electric vehicles. Additionally, scientists have discovered that cesium tin iodide (CsSnI3) blocks most heat transfer while maintaining high electrical conductivity.
via timesofindia.com·sciencedaily.com·researchgate.net·researchgate.net
2024
9 updates
2024
9 updatesAn analysis of the ferroelectric memory market highlighted its potential in specialized embedded memory applications, particularly as manufacturing processes shrink below 28nm where traditional NOR flash becomes more difficult and expensive.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
Chinese scientists announced the development of a groundbreaking ferroelectric material that could enable storage chips with an almost infinite lifespan. This material has the potential to significantly reduce data center costs and find applications in demanding environments like deep-sea exploration and aerospace.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
A team led by Bingcheng Luo from China Agricultural University published a review on perovskite-based ferroelectric ceramics for energy storage, emphasizing their superior stability and potential for high energy density. While focused on energy storage, advancements in ferroelectric materials often have implications for data storage.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
Chinese researchers have developed a fatigue-free sliding ferroelectric material, addressing a long-standing issue of performance degradation in traditional ferroelectric materials. This breakthrough involves a layered 3R-MoS2 dual-gate device that maintained its performance.
via sciencetimes.com
Chinese scientists have developed a new inorganic perovskite ferroelectric material, cesium germanium bromide (CsGeBr3), which exhibits robust ferroelectricity with a high Curie temperature of approximately 423K. This discovery is expected to significantly boost data storage density and aid in developing green data centers.
via science.org·chinadaily.com.cn·scmp.com·chinanews.com.cn·news.cn
A Chinese research team from USTC and CAS developed a new inorganic ferroelectric material with an ultrahigh Curie temperature exceeding 900K. This breakthrough, published in Science, offers potential for new memory, sensing technologies, and high-temperature electronic devices.
The Fujian began its initial sea trials, testing its advanced systems and capabilities.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
Researchers from Fudan University, led by Professor Wu Wen, have developed a new two-dimensional ferroelectric material that exhibits robust ferroelectricity at room temperature. This discovery, published in Science, holds potential for advancements in high-density data storage.
via english.news.cn·chinadaily.com.cn·news.fudan.edu.cn·globaltimes.cn·macaubusiness.com
Reports indicated that the Ferroelectric RAM (FeRAM) market is projected for robust growth, with the Asia Pacific region, including China, expected to dominate. This highlights increasing commercial interest and development in ferroelectric memory technologies.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
2023
5 updates
2023
5 updatesChinese scientists have developed a new type of ferroelectric material with a 'self-healing' function, which can repair itself after damage. This innovation could lead to more durable, reliable, and efficient electronic devices.
via chinadaily.com.cn·ecns.cn·newseu.cgtn.com·scitechdaily.com·phys.org
A research team led by Professor Wu Wei from Tsinghua University made a significant breakthrough in developing new ferroelectric materials with enhanced properties specifically for memory applications.
via tsinghua.edu.cn
Chinese scientists from the Ningbo Institute of Material Technology and Engineering have successfully made ferroelectric material highly elastic, addressing a limitation for wearable electronic devices. This development is distinct from previous reports on ferroelectric crystals for AI chips.
via news.cgtn.com
A collaborative team, including researchers from the Chinese Academy of Sciences and Zhejiang University, along with the National University of Singapore, discovered a novel single-element 2D ferroelectric material, 2D black phosphorus-like bismuth (BP-Bi). This discovery challenged conventional understanding that ferroelectric materials must be compounds with opposing charges.
via scmp.com·news.nus.edu.sg·ariando.science.nus.edu.sg·openpr.com·eurekalert.org
Scientists from the Hefei Institutes of Physical Science discovered a new hafnium oxide-based ferroelectric thin film that maintains its properties at a very small size.
via news.cgtn.com
2022
1 update
2022
1 updateChina launched its third and most advanced aircraft carrier, the Fujian (Type 003), which is the country's first to feature an electromagnetic catapult aircraft launch system.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
2019
1 update
2019
1 updateThe Shandong was officially commissioned into the PLAN, further expanding China's carrier fleet and marking the country's entry into an elite group of nations operating multiple carriers.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
2017
1 update
2017
1 updateChina launched its second aircraft carrier, the Type 002 Shandong, which was the country's first domestically built carrier.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
2012
1 update
2012
1 updateThe Liaoning was officially commissioned into the People's Liberation Army Navy (PLAN), becoming China's first operational aircraft carrier.
via en.wikipedia.org·voanews.com·news.cgtn.com·en.wikipedia.org·chinapower.csis.org
2011
Story began · 14 years, 9 mo ago