China Develops Prototype EUV Lithography Machine
A Chinese EUV lithography machine prototype, capable of generating 13.5nm EUV light, is undergoing extensive testing in a high-security facility in Shenzhen as of March 17, 2026. As of March 17, 2026, the prototype has not yet produced commercially viable chips, with significant challenges remaining in optical systems, throughput, and overall yield. The physical assembly of this full-scale prototype was completed on December 1, 2024, following initial power-on and calibration tests that began on January 1, 2025. This development represents a monumental technological achievement for China, demonstrating its ability to build a functional EUV system, with initial patterning experiments conducted on June 1, 2025, and successful etching of basic patterns reported by September 1, 2025.
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Track this story2026
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2026
1 updateA Chinese EUV lithography machine prototype is reportedly undergoing extensive testing in a high-security facility in Shenzhen. This prototype, capable of generating 13.5nm EUV light, represents a monumental technological achievement for China, demonstrating its ability to build a functional EUV system. However, it has not yet produced commercially viable chips, and significant challenges remain in areas such as optical systems, throughput, and overall yield, with ongoing efforts focused on refinement and optimization.
2025
4 updates
2025
4 updatesPublic statements from Chinese officials or state media begin to hint at significant progress in domestic lithography technology, without revealing specific details about the EUV prototype. These statements often emphasize China's growing self-reliance in critical technologies and its commitment to overcoming foreign restrictions. Such announcements aim to bolster national confidence and signal advancements to the international community.
Reports indicate that the prototype successfully etched basic patterns at resolutions approaching advanced nodes, though not yet at commercial yield or speed. This suggests the machine is capable of producing features relevant to modern chip manufacturing, albeit with limitations. The focus remains on improving performance, stability, and throughput to meet industry standards.
Initial patterning experiments are conducted using the prototype, focusing on demonstrating basic resolution capabilities on test wafers. These early tests aim to verify the machine's ability to transfer patterns at EUV wavelengths, even if at low throughput or with imperfections. This phase provides critical data for further optimization and refinement of the system.
Initial power-on and calibration tests commence for the newly assembled EUV prototype. Engineers begin verifying the functionality of all integrated systems, including the light source, optical train, wafer handling, and vacuum systems. This phase focuses on ensuring all components operate as designed and are properly synchronized, laying the groundwork for actual patterning experiments.
2024
7 updates
2024
7 updatesThe physical assembly of the first full-scale EUV lithography machine prototype is completed at the high-security facility in Shenzhen. This marks a significant engineering achievement, bringing together years of research and component development into a single, integrated system. The completion of assembly paves the way for comprehensive system-level testing and calibration.
Initial reports indicate the successful generation and manipulation of 13.5nm EUV light within a controlled environment using the integrated testbed. This milestone confirms the operational feasibility of the domestically developed light source and the ability to guide the EUV beam through a rudimentary optical path. It represents a critical proof-of-concept for the core EUV technology.
Various independently developed sub-systems, including the light source, optical modules, wafer stage, and vacuum systems, are successfully integrated into a preliminary testbed. This integration phase allows for initial functional verification of how these complex components interact. This step is crucial for identifying and resolving compatibility issues before final assembly of the full prototype.
Sources indicate that a prototype EUV lithography machine has been activated in Shenzhen, China. This development, reportedly based on reverse-engineering ASML scanners, marks a significant step in China's semiconductor ambitions. The machine is on track to produce prototype chips by 2028, though some analysts suggest 2030 might be more realistic.
Further advancements are reported in vacuum technology and contamination control systems, which are essential for the operational environment of an EUV machine. The extreme ultraviolet light is absorbed by air, necessitating a near-perfect vacuum, while even microscopic contaminants can severely impact performance. These developments ensure the integrity of the EUV light path and the cleanliness required for high-yield manufacturing.
Building on the LDP light source breakthrough, the Harbin Institute of Technology collaborates with the Shanghai Institute of Optics and Fine Mechanics to enhance EUV light focusing and control. This partnership aims to refine the precision and stability of the EUV beam, which is critical for accurate patterning on wafers. Other institutions, including Tsinghua University, also contribute to related technologies, such as power optimization and future light source designs, showcasing a coordinated national effort.
The Harbin Institute of Technology, under Professor Zhao Yongpeng, achieves a significant breakthrough by developing a compact and efficient EUV light source using Laser-Induced Discharge Plasma (LDP) technology. This innovative approach offers a potentially simpler, more cost-effective, and energy-efficient alternative to the Laser-Produced Plasma (LPP) method used by ASML. This development is a crucial step in addressing one of the core components of an EUV machine.
2023
4 updates
2023
4 updatesInformation surfaces about the establishment of a dedicated, high-security facility in Shenzhen, specifically designed for the final assembly and testing of an EUV lithography machine prototype. This facility is equipped with advanced cleanroom technology and specialized infrastructure, indicating that the project has moved beyond component development to system integration. The creation of such a facility highlights the advanced stage of the project.
Reports emerge of successful testing of a prototype high-precision wafer stage by a Chinese research consortium. The wafer stage is responsible for accurately positioning the silicon wafer during the lithography process, requiring nanometer-level precision. This development is crucial for achieving the alignment and overlay accuracy necessary for advanced chip manufacturing.
Chinese researchers announce breakthroughs in developing advanced photoresist materials specifically designed for EUV wavelengths. Photoresists are critical for transferring patterns onto silicon wafers with high precision. Overcoming challenges in EUV photoresist development is a significant step, as these materials must be highly sensitive and capable of resolving extremely fine features under EUV exposure.
SMEE files a significant patent application for 'extreme ultraviolet (EUV) radiation generators and lithography equipment,' signaling concrete progress in its research and development efforts. This patent filing indicates that SMEE is actively working on core EUV technologies, including the light source and the overall system architecture. While a patent does not guarantee a working product, it demonstrates a strategic focus and intellectual property development in the EUV domain.
2022
3 updates
2022
3 updatesShanghai Micro Electronics Equipment (SMEE) is added to the US Commerce Department's Entity List, effectively blacklisting the company and restricting its access to certain US technologies. This sanction further intensifies China's urgency to develop fully indigenous lithography solutions, as it directly impacts a key domestic player in the semiconductor equipment sector. The move underscores the geopolitical tensions surrounding advanced chip technology.
Chinese research institutions, including those affiliated with CAS, reportedly make strides in developing high-numerical aperture (NA) optical systems prototypes. High-NA optics are essential for achieving the fine resolution required for advanced chip manufacturing with EUV. These developments indicate a focused effort on mastering the complex optical challenges inherent in EUV lithography.
Shanghai Micro Electronics Equipment (SMEE) reports significant progress in its deep ultraviolet (DUV) immersion lithography technology, with some sources suggesting it is nearing production readiness for 28nm nodes. While not EUV, this achievement demonstrates SMEE's growing expertise in precision lithography and its ability to manufacture complex semiconductor equipment. This experience provides a crucial foundation for its more ambitious EUV development efforts.
2021
2 updates
2021
2 updatesThe Chinese government issues new directives emphasizing the prioritization of domestic supply chains for semiconductor manufacturing equipment. These policies encourage deeper collaboration between national research institutions and domestic equipment manufacturers, such as SMEE, to foster indigenous production capabilities. The aim is to reduce reliance on foreign suppliers and build a resilient, self-sufficient semiconductor ecosystem.
State-backed research institutes reportedly achieve initial breakthroughs in critical EUV components, including the development of high-reflectivity multi-layer mirrors and advanced vacuum systems. These components are fundamental to guiding and maintaining the purity of the EUV light path, demonstrating early success in overcoming some of the most challenging technical hurdles. These developments are crucial steps towards a fully functional EUV machine.
2020
2 updates
2020
2 updatesChina intensifies its global talent acquisition efforts, launching highly attractive recruitment programs targeting overseas Chinese scientists and engineers. These initiatives offer substantial financial incentives, research funding, and prestigious positions to experts in fields critical to EUV lithography, such as optical engineering, materials science, and vacuum technology. The goal is to repatriate top talent and accelerate domestic innovation.
Major research consortia are established, bringing together leading institutions like the Chinese Academy of Sciences (CAS), Tsinghua University, and Peking University. These collaborations focus on fundamental research and development of key EUV sub-components, including advanced optics, light sources, and precision mechanics. This structured approach aims to pool national expertise and resources to tackle the complex challenges of EUV technology.
2019
2 updates
2019
2 updatesChina's National Semiconductor Industry Investment Fund (Big Fund) Phase II is officially launched, committing over $29 billion to bolster domestic semiconductor capabilities. A significant portion of these funds is earmarked for critical equipment development, including advanced lithography, signaling a strong state-backed financial commitment to the 'Manhattan Project.' This investment aims to reduce reliance on foreign technology and accelerate indigenous innovation across the supply chain.
The United States initiated a pressure campaign to prevent China from acquiring advanced EUV technology, leading to ASML being barred from selling its cutting-edge EUV equipment to China. This move significantly intensified China's resolve to develop its own domestic lithography capabilities, marking a pivotal moment for the country's semiconductor ambitions. Concurrently, China launched an aggressive talent acquisition campaign, offering substantial incentives to attract overseas experts in lithography and related fields, including former ASML engineers.
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